Williams, 1999  Title: Hair Removal Using an 810 nm Gallium
Aluminum Arsenide Semiconductor Diode Laser: A Preliminary Study.
Author: Williams RM, Gladstone HB, Moy RL
Journal: Dermatol Surg 1999 Dec;25(12):935-937
PMID: 10594625 ABSTRACT
Affiliated institution:
BACKGROUND: Laser hair removal is a popular treatment method
for removing unwanted hair. Several laser systems are available
for laser hair removal. The gallium aluminum arsenide semiconductor
diode (GAASD) laser is one of the newer laser modalities to be
studied.
OBJECTIVE: To evaluate the efficacy of the GAASD laser system
in removing unwanted hair.
METHODS: Twenty-six patients with brown or black hair growth
were treated with the GAASD laser at fluences of 20-80 J/cm2.
Hair regrowth was measured 4 weeks after the first treatment,
4 weeks after the second treatment, 4 weeks after the third treatment,
and 4 weeks, 8 weeks, and 8 months after the fourth treatment.
CONCLUSION: GAASD laser treatment resulted in hair growth delay
in all treated regions. Repeated laser treatments did not produce
an increased number of vellus hairs. The percentage of hair reduction
fluctuated between 5% and 13% with the second or third treatment
averaging the highest percent reduction. In all cases, the percentage
of hair reduction of the treatment sites evaluated at 8 months
after the fourth treatment was less than both the second and third
treatments (highest average percent reduction) and the fourth
(last) treatment.
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